32,159 research outputs found

    Finite-Difference Time-Domain Study of Guided Modes in Nano-plasmonic Waveguides

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    A conformal dispersive finite-difference time-domain (FDTD) method is developed for the study of one-dimensional (1-D) plasmonic waveguides formed by an array of periodic infinite-long silver cylinders at optical frequencies. The curved surfaces of circular and elliptical inclusions are modelled in orthogonal FDTD grid using effective permittivities (EPs) and the material frequency dispersion is taken into account using an auxiliary differential equation (ADE) method. The proposed FDTD method does not introduce numerical instability but it requires a fourth-order discretisation procedure. To the authors' knowledge, it is the first time that the modelling of curved structures using a conformal scheme is combined with the dispersive FDTD method. The dispersion diagrams obtained using EPs and staircase approximations are compared with those from the frequency domain embedding method. It is shown that the dispersion diagram can be modified by adding additional elements or changing geometry of inclusions. Numerical simulations of plasmonic waveguides formed by seven elements show that row(s) of silver nanoscale cylinders can guide the propagation of light due to the coupling of surface plasmons.Comment: 6 pages, 10 figures, accepted for publication, IEEE Trans. Antennas Propaga

    A Radial-Dependent Dispersive Finite-Difference Time-Domain Method for the Evaluation of Electromagnetic Cloaks

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    A radial-dependent dispersive finite-difference time-domain (FDTD) method is proposed to simulate electromagnetic cloaking devices. The Drude dispersion model is applied to model the electromagnetic characteristics of the cloaking medium. Both lossless and lossy cloaking materials are examined and their operating bandwidth is also investigated. It is demonstrated that the perfect "invisibility" from electromagnetic cloaks is only available for lossless metamaterials and within an extremely narrow frequency band.Comment: 18 pages, 10 figure

    Fast k-means based on KNN Graph

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    In the era of big data, k-means clustering has been widely adopted as a basic processing tool in various contexts. However, its computational cost could be prohibitively high as the data size and the cluster number are large. It is well known that the processing bottleneck of k-means lies in the operation of seeking closest centroid in each iteration. In this paper, a novel solution towards the scalability issue of k-means is presented. In the proposal, k-means is supported by an approximate k-nearest neighbors graph. In the k-means iteration, each data sample is only compared to clusters that its nearest neighbors reside. Since the number of nearest neighbors we consider is much less than k, the processing cost in this step becomes minor and irrelevant to k. The processing bottleneck is therefore overcome. The most interesting thing is that k-nearest neighbor graph is constructed by iteratively calling the fast kk-means itself. Comparing with existing fast k-means variants, the proposed algorithm achieves hundreds to thousands times speed-up while maintaining high clustering quality. As it is tested on 10 million 512-dimensional data, it takes only 5.2 hours to produce 1 million clusters. In contrast, to fulfill the same scale of clustering, it would take 3 years for traditional k-means

    Energy-storage properties and electrocaloric effects of Pb(1-3x/2)LaxZr0.85Ti0.15O3 antiferroelectric thick films

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    1-µm-Pb(1-3x/2)LaxZr0.85Ti0.15O3 (PLZT) antiferroelectric (AFE) thick films with x = 0.08, 0.10, 0.12, and 0.14 were deposited on LaNiO3/Si (100) substrates by a sol-gel method. The dielectric properties, energy-storage performance, electrocaloric effect, and leakage current behavior were investigated in detail. With increasing La content, dielectric constant and saturated polarizations of the thick films were gradually decreased. A maximum recoverable energy-storage density of 38 J/cm3 and efficiency of 71% were achieved in the thick films with x = 0.12 at room temperature. Moreover, a large reversible adiabatic temperature change ∆T = 25.0 o C was presented in the thick films with x = 0.08 at 127 o C at 990 kV/cm. All the samples had a lower leakage current density below 10- 6 A/cm2 at room temperature. These results indicated that the PLZT AFE thick films could be a potential candidate for applications in high energy-storage density capacitors and cooling devices
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